AUR014N10 Specs and Replacement

Type Designator: AUR014N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 316 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.5 nS

Cossⓘ - Output Capacitance: 2147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: TOLL

AUR014N10 substitution

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AUR014N10 datasheet

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AUR014N10

AUR014N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance TOLL-8L RDS(on) = 1.2m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Para... See More ⇒

Detailed specifications: AP220N04P, AP220N04T, HYG053N10NS1P, HYG053N10NS1B, AUP060N08AG, AUP062N08BG, AUP065N10, AUP074N10, AON7403

Keywords - AUR014N10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs