AUW025N10 Specs and Replacement

Type Designator: AUW025N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 305 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57.2 nS

Cossⓘ - Output Capacitance: 1577 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO247

AUW025N10 substitution

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AUW025N10 datasheet

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 aur020n10 auw025n10.pdf pdf_icon

AUW025N10

AUR020N10, AUW025N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) TOLL = 1.6m (typ.) RDS(on) TO247 = 2.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness ... See More ⇒

Detailed specifications: AUP060N08AG, AUP062N08BG, AUP065N10, AUP074N10, AUR014N10, AUR020N085, AUR020N10, AUR030N10, MMIS60R580P

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