AUW033N08BG Specs and Replacement

Type Designator: AUW033N08BG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 340 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 1292 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO247

AUW033N08BG substitution

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AUW033N08BG datasheet

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 aub033n08bg aup033n08bg auw033n08bg.pdf pdf_icon

AUW033N08BG

AUB 8BG A N08BG 033N08BG B033N08 AUP033N AUW0 MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 9m (typ.) source on-res DS(ON) = 2.9 High speed power switc ching Enhanced b dv/dt capability body diod... See More ⇒

Detailed specifications: AUP062N08BG, AUP065N10, AUP074N10, AUR014N10, AUR020N085, AUR020N10, AUR030N10, AUW025N10, AOD4184A

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