EHBA036R1 Specs and Replacement

Type Designator: EHBA036R1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 177 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: PRPAK5X6

EHBA036R1 substitution

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EHBA036R1 datasheet

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EHBA036R1

EHBA036R1 Single N-Ch 30V Fast Switching MOSFETs Features BVDSS 30 V Super Low Gate Charge 100% EAS Guaranteed ID@VGS=10V ,TC=25 C 50 A Green Device Available VGS = 10 V , ID = 20 A 7 Excellent CdV/dt effect decline RDSON(MAX) m Advanced high cell density Trench VGS = 4.5 V , ID = 15 A 10 technology Application Battery management Power Management S... See More ⇒

Detailed specifications: AP3N9R5YT, AP3P020H, AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8, AP6NA3R2MT, CRTT067N10N, 50N06

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.