FTE02P15G Specs and Replacement

Type Designator: FTE02P15G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.6 nS

Cossⓘ - Output Capacitance: 180.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOP8

FTE02P15G substitution

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FTE02P15G datasheet

 ..1. Size:350K  ark-micro
 fte02p15g ftp02p15g.pdf pdf_icon

FTE02P15G

FTE02P15G/FTP02P15G 150V P-Channel Enhancement Mode MOSFET General Features High Dense Cell Design for Low R DS(ON) Part Number BV R I DSX DS(ON) (Typ.) D Rugged Polysilicon Gate Cell Structure RoHS Compliant FTE02P15G -150V 0.20 -2.3A Halogen-free Available 100% Avalanche Tested FTP02P15G -150V 0.20 -15A TO-220AB SOP-8 D D Applications ... See More ⇒

Detailed specifications: SVF11N65T, SVF11N65F, CM3400, CM3407, CM4407, AKF20P45D, AKF30N10S, AKF30N5P0SX, IRFB4227

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