FTF30P35D Specs and Replacement

Type Designator: FTF30P35D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 16 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 6.94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm

Package: PDFN3333

FTF30P35D substitution

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FTF30P35D datasheet

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FTF30P35D

FTF30P35D Dual P-Channel 350V Enhancement Mode MOSFETs General Features Proprietary Advanced Planar Technology BV R (Max.) I DSS DS(ON) D Rugged Polysilicon Gate Cell Structure Fast Switching Speed -350V 30 -0.5A RoHS Compliant Halogen-free available PDFN3333 Applications High Efficiency SMPS Adaptor/Charger Active PFC Ordering... See More ⇒

Detailed specifications: AKF20P45D, AKF30N10S, AKF30N5P0SX, FTE02P15G, FTP02P15G, FTE15C35G, FTF15N35D, FTF25N35DHVT, 2N7000

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