CRJQ80N65F Datasheet. Specs and Replacement

Type Designator: CRJQ80N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 470 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 131 nS

Cossⓘ - Output Capacitance: 137 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO247

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CRJQ80N65F datasheet

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CRJQ80N65F

CRJQ80N65F ( ) SJMOS N-MOSFET 650V, 77m , 43A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Better efficiency due to very low FOM 77m ID Ultra-fast body diode 43A Qualified for industrial grade applications according to JEDEC Applications 10... See More ⇒

Detailed specifications: ASDM100R045NQ, ASDM100R066NQ, ASDM100R090NP, ASDM100R160NKQ, ASDM100R750PKQ, ASDM12N65F, ASDM20N100Q, ASDM20N20KQ, IRF9540N

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