RM50P30DF Datasheet. Specs and Replacement

Type Designator: RM50P30DF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 695 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN5X6-8L

RM50P30DF substitution

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RM50P30DF datasheet

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RM50P30DF

RM50P30DF P-Channel Enhancement Mode Power MOSFET D Description The RM50P30DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features Schematic diagram VDS =-30V,ID =-50A RDS(ON) ... See More ⇒

Detailed specifications: ASDM100R750PKQ, ASDM12N65F, ASDM20N100Q, ASDM20N20KQ, CRJQ80N65F, CRST030N10N, CRSS028N10N, CRTT095N12N, K3569

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