ASDM30P30BE Datasheet. Specs and Replacement

Type Designator: ASDM30P30BE

Marking Code: 30P30B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 30 nC

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 371 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN3.3X3.3-8

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ASDM30P30BE datasheet

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ASDM30P30BE

ASDM30P30BE -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 10 m DS(ON).Typ@ VGS=-10V Application I -30 A D MB / VGA / Vcore POL Applications PDFN3.3*3.3-8 P-MOSFET Absolute Maximum Ratings (T =25 unless otherwise specified) A Symbol Parameter Max. Units V Drain-Source Voltage -30 V ... See More ⇒

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ASDM30P30BE

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-... See More ⇒

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ASDM30P30BE

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-... See More ⇒

 5.3. Size:435K  ascend
 asdm30p30ctd.pdf pdf_icon

ASDM30P30BE

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-... See More ⇒

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Detailed specifications: ASDM12N65F, ASDM20N100Q, ASDM20N20KQ, CRJQ80N65F, CRST030N10N, CRSS028N10N, CRTT095N12N, RM50P30DF, IRFP260, ASDM3400ZA, ASDM3401, ASDM3401ZA, ASDM3415ZA, ASDM3416EZA, ASDM40DN20E, ASDM40N100P, ASDM40N40E

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