ASDM540G Datasheet. Specs and Replacement

Type Designator: ASDM540G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO263

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ASDM540G datasheet

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ASDM540G

ASDM540G 100V N-Channel MOSFET Feature High density cell design for lower Rdson Product Summary Fully characterized avalanche voltage and current VDS 100 V Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(on),Typ@VGS=10V m 31 ID 33 A Application Power switching application Hard switched and High frequency circuits... See More ⇒

Detailed specifications: ASDM40DN20E, ASDM40N100P, ASDM40N40E, ASDM40N60KQ, ASDM40N80KQ, ASDM40R009NQ, ASDM4606S, ASDM4976S, NCEP15T14, ASDM60N30KQ, ASDM60N45KQ, ASDM60N50KQ, ASDM60N70Q, ASDM60N80KQ, ASDM60P12KQ, ASDM60R042NQ, ASDM6802ZC

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