BCD80N06 Datasheet. Specs and Replacement
Type Designator: BCD80N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 286 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
BCD80N06 substitution
- MOSFET ⓘ Cross-Reference Search
BCD80N06 datasheet
bcd80n06.pdf
BCD80N06 Description N-channel Enhancement Mode Power MOSFET Features Application 60V, 80A Load Switch R ... See More ⇒
Detailed specifications: BCT7N65, BCD7N65, BCT4N65, BCD4N65, BCT12N65, BCD12N65, H50N06, T50N06, IRFB7545
Keywords - BCD80N06 MOSFET specs
BCD80N06 cross reference
BCD80N06 equivalent finder
BCD80N06 pdf lookup
BCD80N06 substitution
BCD80N06 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
