BCD90N03 Datasheet. Specs and Replacement
Type Designator: BCD90N03 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 326 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
BCD90N03 substitution
- MOSFET ⓘ Cross-Reference Search
BCD90N03 datasheet
bcd90n03.pdf
BCD90N03 Description N-channel Enhancement Mode Power MOSFET Features Application 30V,90A Load Switch R ... See More ⇒
Detailed specifications: BCD7N65, BCT4N65, BCD4N65, BCT12N65, BCD12N65, H50N06, T50N06, BCD80N06, AON7403
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
