BCD70N07A Datasheet. Specs and Replacement
Type Designator: BCD70N07A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 116 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 261 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO252
BCD70N07A substitution
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BCD70N07A datasheet
bcd70n07a.pdf
BCD70N07A Description N-channel Enhancement Mode Power MOSFET Features Application 68V, 80A Load Switch R ... See More ⇒
Detailed specifications: BCT4N65, BCD4N65, BCT12N65, BCD12N65, H50N06, T50N06, BCD80N06, BCD90N03, K2611
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