AOL1718 Datasheet. Specs and Replacement

Type Designator: AOL1718  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.7 nS

Cossⓘ - Output Capacitance: 693 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: ULTRASO8

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AOL1718 datasheet

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 aol1718.pdf pdf_icon

AOL1718

AOL1718 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AOL1718 uses advanced trench technology ID (at VGS=10V) 90A with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒

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 aol1712.pdf pdf_icon

AOL1718

AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM VDS (V) = 30V SRFET AOL1712 uses advanced trench ID =65A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON) ... See More ⇒

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 aol1704.pdf pdf_icon

AOL1718

AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench VDS (V) = 30V technology with a monolithically integrated Schottky ID =50A (VGS = 10V) diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side RDS(ON) ... See More ⇒

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 aol1700.pdf pdf_icon

AOL1718

AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM VDS (V) = 30V SRFET AOL1700 uses advanced trench ID =85A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON) ... See More ⇒

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Detailed specifications: BCD4N65, BCT12N65, BCD12N65, H50N06, T50N06, BCD80N06, BCD90N03, BCD70N07A, EMB04N03H

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