CS65N25AKR Datasheet. Specs and Replacement
Type Designator: CS65N25AKR 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 420 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 309 nS
Cossⓘ - Output Capacitance: 672 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO247
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CS65N25AKR substitution
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CS65N25AKR datasheet
cs65n25akr.pdf
Silicon N-Channel Power MOSFET R CS65N25 AKR General Description VDSS 250 V CS65N25 AKR, the silicon N-channel Enhanced ID 65 A PD (TC=25 ) 420 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 42 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
cs65n20-30.pdf
CS65N20-30 N PD TC=25 375 W ID VGS=10V,TC=25 65 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VGS=10V,ID=30A 0.05 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs... See More ⇒
Detailed specifications: BCT12N65, BCD12N65, H50N06, T50N06, BCD80N06, BCD90N03, BCD70N07A, AOL1718, RU7088R
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