BM3139KT Datasheet. Specs and Replacement
Type Designator: BM3139KT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm
Package: SOT523
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BM3139KT substitution
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BM3139KT datasheet
bm3134ke.pdf
BM3134KE N-Channel MOSFET Features Pin Configurations V = 20V DS I D = 0.75A R @V = 4.5V, Max =380m DS(ON) GS R @V = 2.5V, Max =450m DS(ON) GS R @V = 1.8V, Max =800m DS(ON) GS General Description Lead Free Product is Acquired Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-723 for Surface Mount Pa... See More ⇒
Detailed specifications: BCD90N03, BCD70N07A, AOL1718, CS65N25AKR, AO3401F, AO3415E, BM3134E, BM3134KE, IRFP064N
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