BM8205 Datasheet. Specs and Replacement

Type Designator: BM8205  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOT23-6L

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BM8205 datasheet

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BM8205

BM8205 20V Dual N-Channel Enhancement MOSFET Features Pin Configurations V = 20V DS I D = 4A R @V = 4.5V, TYP =22m DS(ON) GS R @V = 2.5V, TYP =28m DS(ON) GS General Description Very low on-resistance RDS(ON) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current SOT23-6L for Surface Mount Package. APPLIC... See More ⇒

Detailed specifications: BCD70N07A, AOL1718, CS65N25AKR, AO3401F, AO3415E, BM3134E, BM3134KE, BM3139KT, AO4468

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