BMSN3139 Datasheet. Specs and Replacement

Type Designator: BMSN3139  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60(max) nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT323

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BMSN3139 datasheet

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BMSN3139

BMSN3139 P-Channel Enhancement mode MOSFET Features Pin Configurations V = -20V DS I D = -2A R @V = -4.5V, Max =135m DS(ON) GS R @V = -2.5V, Max =190m DS(ON) GS General Description Advanced tr ench process technology High Density Cell Design For Ultra Low On-Resistance SOT-323 for Surface Mount Package. Applicatin PWM applications Loa... See More ⇒

Detailed specifications: BM3134E, BM3134KE, BM3139KT, BM8205, BMDFN2301, BMDFN2302, BMS2301, BMS2302, IRF840

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