BP0405SCG Datasheet. Specs and Replacement
Type Designator: BP0405SCG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5(5.5) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3(5.5) nS
Cossⓘ - Output Capacitance: 80(72) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026(0.06) Ohm
Package: SOP8
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BP0405SCG datasheet
bp0405scg.pdf
BP0405SCG 40V Complementary MOSFET Description Features The BP0405SCG uses advanced trench technology to N-Channel provide excellent R and low gate charge. The DS(ON) V =40V, I =6A DS D complementary MOSFETs can be used in a wide R ... See More ⇒
Detailed specifications: BMS2302, BMSN3139, SI2301F, SI2309S, BL4N90, BLM3404, B50T040F, B50T070F, IRF640
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