BPM0306CG Datasheet. Specs and Replacement
Type Designator: BPM0306CG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5(7) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5(5.5) nS
Cossⓘ - Output Capacitance: 45(100) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.033) Ohm
Package: SOP8
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BPM0306CG datasheet
bpm0306cg.pdf
BPM0306CG 30V Complementary MOSFET General Description Application The BPM0306CG uses advanced trench technology to H-bridge provide excellent R and low gate charge. The Inverters DS(ON) complementary MOSFETs can be used in a wide variety of applications. Features N-Channel V =30V, I =6.5A DS D R ... See More ⇒
Detailed specifications: BMSN3139, SI2301F, SI2309S, BL4N90, BLM3404, B50T040F, B50T070F, BP0405SCG, IRF1404
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
