BPMS04N003M Datasheet. Specs and Replacement
Type Designator: BPMS04N003M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 860 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: DFN5X6
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BPMS04N003M substitution
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BPMS04N003M datasheet
bpms04n003m.pdf
BPMS04N003M Bright Power Semiconductor 40V N-Channel Power MOSFET General Description Application The BPMS04N003M uses super trench technology that is Synchronous Rectification for Power Supply uniquely optimized to provide the most efficient high DC/DC Converters frequency switching performance. Both conduction and High-frequency switching switching powe... See More ⇒
Detailed specifications: SI2309S, BL4N90, BLM3404, B50T040F, B50T070F, BP0405SCG, BPM0306CG, BPM0405CG, IRFB4110
Keywords - BPMS04N003M MOSFET specs
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