MS34P07 Datasheet. Specs and Replacement

Type Designator: MS34P07  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.2 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

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MS34P07 datasheet

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MS34P07

MS34P07 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS34P07 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for use as a load switch or in PWM applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Package Dimension A... See More ⇒

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MS34P07

MS34P01 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS34P01 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The device is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The devi... See More ⇒

Detailed specifications: B50T070F, BP0405SCG, BPM0306CG, BPM0405CG, BPMS04N003M, MS23N06A, MS23P03, MS34P01, IRFB4227

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