MS60P03 Datasheet. Specs and Replacement
Type Designator: MS60P03 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT23
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MS60P03 datasheet
ms60p03.pdf
MS60P03 P-Channel 60-V (D-S) MOSFET Description Graphic Symbol The MS60P03 is the highest performance P-ch MOSFETs with super high dense cell design for low R and gate charge for high efficiency fast switching DS(ON) applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Package Dimension Low Reverse Transfer... See More ⇒
ms60p02ne.pdf
Bruckewell Technology Corp., Ltd. MS60P02NE P-Channel 60V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri... See More ⇒
Detailed specifications: BPMS04N003M, MS23N06A, MS23P03, MS34P01, MS34P07, MS40N05, MS40P05, MS40P05AU, IRFB4115
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