MSH30P100 Datasheet. Specs and Replacement

Type Designator: MSH30P100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 983 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: PDFN5X6

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MSH30P100 datasheet

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MSH30P100

MSH30P100 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize RDS(ON), provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. The d... See More ⇒

Detailed specifications: MS40N05, MS40P05, MS40P05AU, MS60P03, MSB100N023, MSD40P45, MSD60P16, MSH100N045SA, IRF630

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