MSH60N35D Datasheet. Specs and Replacement

Type Designator: MSH60N35D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN5X6D

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MSH60N35D datasheet

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MSH60N35D

MSH60N35D Dual N-Channel 60-V (D-S) MOSFET Description Graphic Symbol The device uses advanced Trench technology and designs to provide excellent R with low gate charge. DS(ON) This device is suitable for use in PWM, load switching and general purpose applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approv... See More ⇒

Detailed specifications: MS40P05AU, MS60P03, MSB100N023, MSD40P45, MSD60P16, MSH100N045SA, MSH30P100, MSH40N032, IRF4905

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