MSHM30N46 Datasheet. Specs and Replacement

Type Designator: MSHM30N46  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN3.3X3.3

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MSHM30N46 datasheet

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MSHM30N46

MSHM30N46 N-Channel 30-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the DS(ON) synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved... See More ⇒

Detailed specifications: MS60P03, MSB100N023, MSD40P45, MSD60P16, MSH100N045SA, MSH30P100, MSH40N032, MSH60N35D, 2N7000

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