MSQ40P07D Datasheet. Specs and Replacement
Type Designator: MSQ40P07D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 108 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP8
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MSQ40P07D substitution
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MSQ40P07D datasheet
msq40p07d.pdf
MSQ40P07D P-Channel 40-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ... See More ⇒
Detailed specifications: MSH60N35D, MSHM30N46, MSHM40N085, MSHM60P14, MSQ100N03D, MSQ30P07D, MSQ30P15, MSQ30P40D, BS170
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
