CEB100N10L Datasheet. Specs and Replacement

Type Designator: CEB100N10L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 92 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO263

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CEB100N10L datasheet

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 cep100n10l ceb100n10l.pdf pdf_icon

CEB100N10L

CEP100N10L/CEB100N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 92A, RDS(ON) = 8.2m @VGS = 10V. RDS(ON) = 10.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C u... See More ⇒

 9.1. Size:420K  cet
 cep10n6 ceb10n6 cef10n6.pdf pdf_icon

CEB100N10L

CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N6 600V 0.75 10A 10V CEB10N6 600V 0.75 10A 10V CEF10N6 600V 0.75 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PA... See More ⇒

 9.2. Size:109K  cet
 cep10n4 ceb10n4 cei10n4 cef10n4.pdf pdf_icon

CEB100N10L

CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N4 450V 0.7 10A 10V CEB10N4 450V 0.7 10A 10V CEI10N4 450V 0.7 10A 10V CEF10N4 450V 0.7 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO... See More ⇒

 9.3. Size:385K  cet
 cep10n65 ceb10n65 cef10n65.pdf pdf_icon

CEB100N10L

CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85 10A 10V CEB10N65 650V 0.85 10A 10V CEF10N65 650V 0.85 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CE... See More ⇒

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Detailed specifications: CB3139KTB, BC2301T-2.8A, BC2301W, BC2302-2.8A, BC2302T-2.8A, BC2302W, BC3134K, BC3134KT, STF13NM60N

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