All MOSFET. ZXM64P03X Datasheet

 

ZXM64P03X Datasheet and Replacement


   Type Designator: ZXM64P03X
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Cossⓘ - Output Capacitance: 825 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: MSOP8
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ZXM64P03X Datasheet (PDF)

 ..1. Size:333K  diodes
 zxm64p03x.pdf pdf_icon

ZXM64P03X

ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP

 0.1. Size:331K  zetex
 zxm64p03xta.pdf pdf_icon

ZXM64P03X

ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP

 6.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P03X

ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

 6.2. Size:100K  zetex
 zxm64p035gta.pdf pdf_icon

ZXM64P03X

ZXM64P035G35V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

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History: TK2P60D | IRFBG20

Keywords - ZXM64P03X MOSFET datasheet

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