ZXM64P03X - аналоги и даташиты транзистора

 

ZXM64P03X - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZXM64P03X
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
   Cossⓘ - Выходная емкость: 825 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: MSOP8
 

 Аналог (замена) для ZXM64P03X

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM64P03X Datasheet (PDF)

 ..1. Size:333K  diodes
 zxm64p03x.pdf pdf_icon

ZXM64P03X

ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP

 0.1. Size:331K  zetex
 zxm64p03xta.pdf pdf_icon

ZXM64P03X

ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP

 6.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P03X

ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

 6.2. Size:100K  zetex
 zxm64p035gta.pdf pdf_icon

ZXM64P03X

ZXM64P035G35V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DMP3098L , DMP3098LDM , DMP3098LSD , DMP3098LSS , DMP3120L , DMP3130L , DMP3160L , ZXM61P03F , AO4407 , ZXM66P03N8 , ZXMD63P03X , ZXMP3A13F , ZXMP3A16DN8 , ZXMP3A16G , ZXMP3A16N8 , ZXMP3A17DN8 , ZXMP3A17E6 .

History: HCF70R910 | AON6906

 

 
Back to Top

 


 
.