ZXMC10A816N8 PDF and Equivalents Search

 

ZXMC10A816N8 Specs and Replacement

Type Designator: ZXMC10A816N8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SO8

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ZXMC10A816N8 datasheet

 ..1. Size:183K  diodes
 zxmc10a816n8.pdf pdf_icon

ZXMC10A816N8

A Product Line of Diodes Incorporated ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary ID (A) Device V(BR)DSS (V) QG (nC) RDS(on) ( ) TA= 25 C 0.230 @ VGS= 10V 2.1 Q1 100 9.2 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 Description This new generation complementary dual MOSFE... See More ⇒

Detailed specifications: ZXMC3A18DN8, ZXMC3AMC, ZXMC3F31DN8, ZXMD63C03X, BSS8402DW, DMC4028SSD, DMC4040SSD, DMC4050SSD, IRLB4132, ZXMC4559DN8, ZXMC4A16DN8, ZXMC6A09DN8, DMS2120LFWB, DMS2220LFDB, DMS2220LFW, 2SK311, 2SK3107C

Keywords - ZXMC10A816N8 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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