All MOSFET. ZXMC10A816N8 Datasheet

 

ZXMC10A816N8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMC10A816N8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Qgⓘ - Total Gate Charge: 9.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SO8

 ZXMC10A816N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMC10A816N8 Datasheet (PDF)

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 zxmc10a816n8.pdf

ZXMC10A816N8 ZXMC10A816N8

A Product Line ofDiodes IncorporatedZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary ID (A) Device V(BR)DSS (V) QG (nC) RDS(on) () TA= 25C 0.230 @ VGS= 10V 2.1 Q1 100 9.2 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 Description This new generation complementary dual MOSFE

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