All MOSFET. ZXMC10A816N8 Datasheet

 

ZXMC10A816N8 Datasheet and Replacement


   Type Designator: ZXMC10A816N8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SO8
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ZXMC10A816N8 Datasheet (PDF)

 ..1. Size:183K  diodes
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ZXMC10A816N8

A Product Line ofDiodes IncorporatedZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary ID (A) Device V(BR)DSS (V) QG (nC) RDS(on) () TA= 25C 0.230 @ VGS= 10V 2.1 Q1 100 9.2 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 Description This new generation complementary dual MOSFE

Datasheet: ZXMC3A18DN8 , ZXMC3AMC , ZXMC3F31DN8 , ZXMD63C03X , BSS8402DW , DMC4028SSD , DMC4040SSD , DMC4050SSD , AON7410 , ZXMC4559DN8 , ZXMC4A16DN8 , ZXMC6A09DN8 , DMS2120LFWB , DMS2220LFDB , DMS2220LFW , 2SK311 , 2SK3107C .

History: AO4806 | BUP66 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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