2SK876 Specs and Replacement

Type Designator: 2SK876

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO247

2SK876 substitution

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2SK876 datasheet

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2SK876

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2SK876

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 9.2. Size:576K  toshiba
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2SK876

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit mm High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low noise NF = 0.5dB (typ.) (RG = 100 k , f = 120 Hz) Small package Absolute Maximum Ratings (Ta = ... See More ⇒

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2SK876

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Detailed specifications: 2SK724, 2SK738, 2SK739, 2SK799, 2SK801, 2SK802, 2SK814, 2SK875, CS150N03A8, 2SK897, 2SK897-MR, 2SK899, 2SK900, 2SK901, 2SK902, 2SK903, 2SK904

Keywords - 2SK876 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.