2SK876 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK876
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO247
2SK876 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK876 Datasheet (PDF)
2sk879.pdf
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =
2sk870.pdf
isc N-Channel MOSFET Transistor 2SK870DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Datasheet: 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2N7000 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 , 2SK903 , 2SK904 .
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