All MOSFET. 2SK876 Datasheet

 

2SK876 Datasheet and Replacement


   Type Designator: 2SK876
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO247
 

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2SK876 Datasheet (PDF)

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2SK876

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2SK876

 9.2. Size:576K  toshiba
 2sk879.pdf pdf_icon

2SK876

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =

 9.3. Size:1661K  nec
 2sk873.pdf pdf_icon

2SK876

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Datasheet: 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , IRLB4132 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 , 2SK903 , 2SK904 .

History: SIHD3N50DA | STS5PF30L | FHP10N65B | FHP100N03A | SSM0410 | STW63N65DM2 | SSF80R1K3S

Keywords - 2SK876 MOSFET datasheet

 2SK876 cross reference
 2SK876 equivalent finder
 2SK876 lookup
 2SK876 substitution
 2SK876 replacement

 

 
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