ATP112 MOSFET. Datasheet pdf. Equivalent

   Type Designator: ATP112
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33.5 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: ATPAK

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