All MOSFET. ATP602 Datasheet

 

ATP602 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ATP602
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.6 nC
   trⓘ - Rise Time: 37.4 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: ATPAK

 ATP602 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATP602 Datasheet (PDF)

 ..1. Size:281K  sanyo
 atp602.pdf

ATP602 ATP602

ATP602Ordering number : ENA1543SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP602ApplicationsFeatures High-speed switching. 10V drive. Avalanche resistance guarantee. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

Datasheet: ATP213 , ATP214 , ATP216 , ATP218 , ATP301 , ATP302 , ATP404 , ATP405 , IRFP250 , ATP613 , BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 .

History: STK400

 

 
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