All MOSFET. ATP602 Datasheet

 

ATP602 Datasheet and Replacement


   Type Designator: ATP602
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.4 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: ATPAK
 

 ATP602 substitution

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ATP602 Datasheet (PDF)

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ATP602

ATP602Ordering number : ENA1543SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP602ApplicationsFeatures High-speed switching. 10V drive. Avalanche resistance guarantee. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

Datasheet: ATP213 , ATP214 , ATP216 , ATP218 , ATP301 , ATP302 , ATP404 , ATP405 , TK10A60D , ATP613 , BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 .

Keywords - ATP602 MOSFET datasheet

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