All MOSFET. ATP613 Datasheet

 

ATP613 Datasheet and Replacement


   Type Designator: ATP613
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: ATPAK
 

 ATP613 substitution

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ATP613 Datasheet (PDF)

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ATP613

ATP613Ordering number : ENA1903SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP613ApplicationsFeatures Reverse recovery time trr=60ns(typ.) ON-resistance RDS(on)=1.55 (typ.) Input Capacitance Ciss=350pF(typ.) 10V drive Halogen free compliance Specifications at Ta=25CAbsolute Maximum RatingsParamet

Datasheet: ATP214 , ATP216 , ATP218 , ATP301 , ATP302 , ATP404 , ATP405 , ATP602 , AON7506 , BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 .

History: 2SJ598 | BL8N60-P

Keywords - ATP613 MOSFET datasheet

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