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ATP613 PDF Specs and Replacement


   Type Designator: ATP613
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: ATPAK
 

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ATP613 PDF Specs

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ATP613

ATP613 Ordering number ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP613 Applications Features Reverse recovery time trr=60ns(typ.) ON-resistance RDS(on)=1.55 (typ.) Input Capacitance Ciss=350pF(typ.) 10V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Paramet... See More ⇒

Detailed specifications: ATP214 , ATP216 , ATP218 , ATP301 , ATP302 , ATP404 , ATP405 , ATP602 , IRFB3607 , BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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