ATP613 Datasheet. Specs and Replacement

Type Designator: ATP613  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: ATPAK

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ATP613 datasheet

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ATP613

ATP613 Ordering number ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP613 Applications Features Reverse recovery time trr=60ns(typ.) ON-resistance RDS(on)=1.55 (typ.) Input Capacitance Ciss=350pF(typ.) 10V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Paramet... See More ⇒

Detailed specifications: ATP214, ATP216, ATP218, ATP301, ATP302, ATP404, ATP405, ATP602, IRFB3607, BBS3002, BFL4001, BFL4004, BFL4007, BFL4026, BFL4036, BFL4037, BMS4007

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.