All MOSFET. BBS3002 Datasheet

 

BBS3002 MOSFET. Datasheet pdf. Equivalent

Type Designator: BBS3002

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 280 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm

Package: TO263

BBS3002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BBS3002 Datasheet (PDF)

1.1. bbs3002.pdf Size:342K _sanyo

BBS3002
BBS3002

BBS3002 Ordering number : ENA1357A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device BBS3002 Applications Features ON-resistance RDS(on)1=4.4m (typ.) ? Input capacitance Ciss=13200pF (typ.) 4V drive Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to

Datasheet: ATP216 , ATP218 , ATP301 , ATP302 , ATP404 , ATP405 , ATP602 , ATP613 , BSS138 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , BS107A .

 

 
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