All MOSFET. BBS3002 Datasheet


BBS3002 MOSFET. Datasheet pdf. Equivalent

Type Designator: BBS3002

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 280 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm

Package: TO263

BBS3002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


BBS3002 Datasheet (PDF)

1.1. bbs3002.pdf Size:342K _sanyo


BBS3002 Ordering number : ENA1357A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device BBS3002 Applications Features ON-resistance RDS(on)1=4.4m (typ.) ? Input capacitance Ciss=13200pF (typ.) 4V drive Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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