BBS3002 MOSFET. Datasheet pdf. Equivalent
Type Designator: BBS3002
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 280 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm
Package: TO263
BBS3002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BBS3002 Datasheet (PDF)
1.1. bbs3002.pdf 
Size:342K _sanyo
BBS3002 Ordering number : ENA1357A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device BBS3002 Applications Features ON-resistance RDS(on)1=4.4m (typ.) ? Input capacitance Ciss=13200pF (typ.) 4V drive Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to
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