ECH8320
MOSFET. Datasheet pdf. Equivalent
Type Designator: ECH8320
Marking Code: YA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 440
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145
Ohm
Package:
ECH8
ECH8320
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ECH8320
Datasheet (PDF)
..1. Size:286K sanyo
ech8320.pdf
ECH8320Ordering number : ENA1429SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8320ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
9.1. Size:35K sanyo
ech8302.pdf
Ordering number : ENN8247ECH8302P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8302ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --7 ADrain Current (Pulse) IDP PW
9.2. Size:36K sanyo
ech8304.pdf
Ordering number : ENN8255ECH8304P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8304ApplicationsFeatures Best suited for load switching. Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 9 VDrain Current (DC) ID
9.3. Size:284K sanyo
ech8310.pdf
ECH8310Ordering number : ENA1430SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8310ApplicationsFeatures 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
9.4. Size:36K sanyo
ech8305.pdf
Ordering number : ENN8145 ECH8305P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8305ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --4 ADrain Current (Pulse) IDP PW1
9.5. Size:36K sanyo
ech8306.pdf
Ordering number : ENA0302 ECH8306SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8306ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --2
9.6. Size:285K sanyo
ech8309.pdf
ECH8309Ordering number : ENA1418ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8309ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (
9.7. Size:268K sanyo
ech8308.pdf
Ordering number : ENA1182ECH8308SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8308ApplicationsFeatures Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -
9.8. Size:285K sanyo
ech8315.pdf
ECH8315Ordering number : ENA1387SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8315ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS
9.9. Size:302K onsemi
ech8309.pdf
Ordering number : ENA1418BECH8309P-Channel Power MOSFEThttp://onsemi.com 12V, 9.5A, 16m , Single ECH8Features 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --9
Datasheet: CPH6445
, EC3A03B
, EC3A04B
, EC4401C
, ECH8308
, ECH8309
, ECH8310
, ECH8315
, IRFP064N
, ECH8410
, ECH8419
, ECH8601M
, ECH8602M
, ECH8649
, ECH8651R
, ECH8652
, ECH8653
.