All MOSFET. ECH8410 Datasheet

 

ECH8410 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ECH8410
   Marking Code: KQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: ECH8

 ECH8410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ECH8410 Datasheet (PDF)

 ..1. Size:286K  sanyo
 ech8410.pdf

ECH8410 ECH8410

ECH8410Ordering number : ENA1331SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8410ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20

 8.1. Size:345K  sanyo
 ech8419.pdf

ECH8410 ECH8410

ECH8419Ordering number : ENA1886SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8419ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Sourc

 8.2. Size:33K  sanyo
 ech8411.pdf

ECH8410 ECH8410

Ordering number : ENA0073 ECH8411N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8411ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID 9 ADrain Current (Pulse) IDP

 9.1. Size:391K  1
 ech8420.pdf

ECH8410 ECH8410

ECH8420Ordering number : EN8993SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETECH8420 General-Purpose Switching DeviceApplicationsFeatures ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source

 9.2. Size:42K  sanyo
 ech8402.pdf

ECH8410 ECH8410

Ordering number : ENN8148 ECH8402N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8402ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 10 ADrain Current (Pulse) IDP PW10

Datasheet: EC3A03B , EC3A04B , EC4401C , ECH8308 , ECH8309 , ECH8310 , ECH8315 , ECH8320 , IRFB3306 , ECH8419 , ECH8601M , ECH8602M , ECH8649 , ECH8651R , ECH8652 , ECH8653 , ECH8654 .

History: IRF9630S

 

 
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