EMH2308 MOSFET. Datasheet pdf. Equivalent
Type Designator: EMH2308
Marking Code: MH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 66 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: EMH8
EMH2308 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EMH2308 Datasheet (PDF)
emh2308.pdf
EMH2308Ordering number : ENA1445SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2308ApplicationsFeatures The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParamete
emh2314.pdf
Ordering number : EN8759AEMH2314Power MOSFEThttp://onsemi.com 12V, 37m , 5A, Dual P-ChannelFeatures ON-resistance RDS(on)1=28m (typ.) Halogen free compliance 1.8V drive Protection Diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VG
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History: IXFK44N50P | IXFL32N120P
History: IXFK44N50P | IXFL32N120P
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