EMH2308 Datasheet and Replacement
Type Designator: EMH2308
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: EMH8
EMH2308 substitution
EMH2308 Datasheet (PDF)
emh2308.pdf
EMH2308Ordering number : ENA1445SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2308ApplicationsFeatures The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParamete
emh2314.pdf
Ordering number : EN8759AEMH2314Power MOSFEThttp://onsemi.com 12V, 37m , 5A, Dual P-ChannelFeatures ON-resistance RDS(on)1=28m (typ.) Halogen free compliance 1.8V drive Protection Diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VG
Datasheet: ECH8664R , ECH8667 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , EMH1307 , EMH1405 , IRF1404 , EMH2407 , EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 .
History: EMH2412
Keywords - EMH2308 MOSFET datasheet
EMH2308 cross reference
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EMH2308 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: EMH2412
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