All MOSFET. EMH2604 Datasheet

 

EMH2604 Datasheet and Replacement


   Type Designator: EMH2604
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: EMH8
 

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EMH2604 Datasheet (PDF)

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EMH2604

EMH2604Ordering number : EN9006ASANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceEMH2604ApplicationsFeatures Nch + Pch MOSFET ON-resistance Nch : RDS(on)1=34m (typ.) Pch : RDS(on)1=65m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symb

Datasheet: EMH1303 , EMH1307 , EMH1405 , EMH2308 , EMH2407 , EMH2408 , EMH2409 , EMH2412 , IRF3710 , EMH2801 , FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 .

History: IRLBA1304 | IXFK26N90 | NTMFS6H818NLT1G | APT802R4KN | HUF75637P3 | STD17N06-1 | HUF75637S3S

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