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EMH2801 Specs and Replacement

Type Designator: EMH2801

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: EMH8

EMH2801 substitution

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EMH2801 datasheet

 ..1. Size:574K  sanyo
 emh2801.pdf pdf_icon

EMH2801

EMH2801 Ordering number ENA1821A SANYO Semiconductors DATA SHEET MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance 1.8V dr... See More ⇒

Detailed specifications: EMH1307 , EMH1405 , EMH2308 , EMH2407 , EMH2408 , EMH2409 , EMH2412 , EMH2604 , IRFB4227 , FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 , FW907 .

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