EMH2801 Datasheet and Replacement
Type Designator: EMH2801
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: EMH8
EMH2801 substitution
EMH2801 Datasheet (PDF)
emh2801.pdf

EMH2801Ordering number : ENA1821ASANYO SemiconductorsDATA SHEETMOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeEMH2801General-Purpose Switching DeviceApplicationsFeatures Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance 1.8V dr
Datasheet: EMH1307 , EMH1405 , EMH2308 , EMH2407 , EMH2408 , EMH2409 , EMH2412 , EMH2604 , IRF3710 , FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 , FW907 .
History: FW274
Keywords - EMH2801 MOSFET datasheet
EMH2801 cross reference
EMH2801 equivalent finder
EMH2801 lookup
EMH2801 substitution
EMH2801 replacement
History: FW274



LIST
Last Update
MOSFET: AP2320MI | AP2313MI | AP2312MI | AP2312AI | AP2311MI | AP2311AI | AP2307MI | AP2307AI | AP2305MI | AP2305BI | AP2305AI | AP2302CI | AP2301BI | AP2300MI | AP2300AI | AP15P06D
Popular searches
a1046 transistor | hy19p03 | 2sk2749 | c2577 transistor | k3563 transistor | 2sc1775 datasheet | j377 transistor datasheet | svt20240nt