All MOSFET. EMH2801 Datasheet

 

EMH2801 Datasheet and Replacement


   Type Designator: EMH2801
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: EMH8
 

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EMH2801 Datasheet (PDF)

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EMH2801

EMH2801Ordering number : ENA1821ASANYO SemiconductorsDATA SHEETMOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeEMH2801General-Purpose Switching DeviceApplicationsFeatures Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance 1.8V dr

Datasheet: EMH1307 , EMH1405 , EMH2308 , EMH2407 , EMH2408 , EMH2409 , EMH2412 , EMH2604 , AON6414A , FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 , FW907 .

History: IRFY9130 | IXTV250N075T

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