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FW811 Specs and Replacement

Type Designator: FW811

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP8

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FW811 datasheet

 ..1. Size:292K  sanyo
 fw811.pdf pdf_icon

FW811

FW811 Ordering number ENA1570 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FW811 Applications Features 4V drive. Composite type, facilitating high-density mounting. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 ... See More ⇒

Detailed specifications: EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , IRFB4115 , FW812 , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 .

Keywords - FW811 MOSFET specs

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