All MOSFET. FW811 Datasheet

 

FW811 Datasheet and Replacement


   Type Designator: FW811
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOP8
 

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FW811 Datasheet (PDF)

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FW811

FW811Ordering number : ENA1570SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFW811ApplicationsFeatures 4V drive. Composite type, facilitating high-density mounting.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20

Datasheet: EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , IRFP250N , FW812 , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 .

History: EMH2412

Keywords - FW811 MOSFET datasheet

 FW811 cross reference
 FW811 equivalent finder
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