All MOSFET. FW811 Datasheet

 

FW811 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FW811
   Marking Code: W811
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOP8

 FW811 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FW811 Datasheet (PDF)

 ..1. Size:292K  sanyo
 fw811.pdf

FW811 FW811

FW811Ordering number : ENA1570SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFW811ApplicationsFeatures 4V drive. Composite type, facilitating high-density mounting.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20

Datasheet: EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , IRF9540 , FW812 , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 .

 

 
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