All MOSFET. FW812 Datasheet

 

FW812 Datasheet and Replacement


   Type Designator: FW812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46.6 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

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FW812 Datasheet (PDF)

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FW812

FW812Ordering number : ENA1806SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFW812ApplicationsFeatures Low ON-resistance 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mountingSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrai

Datasheet: EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , FW811 , IRF9540 , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 .

History: IXFK32N50Q

Keywords - FW812 MOSFET datasheet

 FW812 cross reference
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