FW812 PDF and Equivalents Search

 

FW812 Specs and Replacement

Type Designator: FW812

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46.6 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP8

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FW812 datasheet

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FW812

FW812 Ordering number ENA1806 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FW812 Applications Features Low ON-resistance 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drai... See More ⇒

Detailed specifications: EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , FW811 , 2N7000 , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 .

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