All MOSFET. FW812 Datasheet

 

FW812 Datasheet and Replacement


   Type Designator: FW812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46.6 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

 FW812 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FW812 Datasheet (PDF)

 ..1. Size:326K  1
 fw812.pdf pdf_icon

FW812

FW812Ordering number : ENA1806SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFW812ApplicationsFeatures Low ON-resistance 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mountingSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrai

Datasheet: EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , FW811 , IRFP250N , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 .

History: KE3587-G

Keywords - FW812 MOSFET datasheet

 FW812 cross reference
 FW812 equivalent finder
 FW812 lookup
 FW812 substitution
 FW812 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.