FW813 Specs and Replacement
Type Designator: FW813
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: SOP8
FW813 substitution
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FW813 datasheet
fw813.pdf
FW813 Ordering number ENA1884 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FW813 Applications Features ON-resistance RDS(on)1=39m (typ.) 4V drive Nch + Nch MOSFET Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage V... See More ⇒
Detailed specifications: EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , FW811 , FW812 , P55NF06 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 .
Keywords - FW813 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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