All MOSFET. FW813 Datasheet

 

FW813 Datasheet and Replacement


   Type Designator: FW813
   Marking Code: W813
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: SOP8
 

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FW813 Datasheet (PDF)

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FW813

FW813Ordering number : ENA1884SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFW813ApplicationsFeatures ON-resistance RDS(on)1=39m (typ.) 4V drive Nch + Nch MOSFETSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage V

Datasheet: EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , FW811 , FW812 , IRFB4115 , FW906 , FW907 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 .

Keywords - FW813 MOSFET datasheet

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