MMFT960 MOSFET. Datasheet pdf. Equivalent
Type Designator: MMFT960
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 0.3 A
Maximum Drain-Source On-State Resistance (Rds): 1.7 Ohm
Package: SOT223
MMFT960 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMFT960 Datasheet (PDF)
1.1. mmft960t1rev3x.pdf 
Size:122K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT960T1/D MMFT960T1 Medium Power Field Effect Motorola Preferred Device Transistor N–Channel Enhancement–Mode MEDIUM POWER Silicon Gate TMOS TMOS FET SOT–223 for Surface Mount 300 mA 60 VOLTS This TMOS medium power field effect transistor is designed for RDS(on) = 1.7 OHM MAX high speed, low loss power switching applic
1.2. mmft960t1-d.pdf Size:58K _onsemi
MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N-Channel SOT-223 This Power MOSFET is designed for high speed, low loss power http://onsemi.com switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The device is housed in the SOT-223 300 mA, 60 VOLTS package which is designed for medium power surface mount RDS(on) = 1.7 W applicati
Datasheet: MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , IRFP260N , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E .
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