All MOSFET. MMFT960 Datasheet

 

MMFT960 Datasheet and Replacement


   Type Designator: MMFT960
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO261AA
 

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MMFT960 Datasheet (PDF)

 0.1. Size:122K  motorola
 mmft960t1rev3x.pdf pdf_icon

MMFT960

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT960T1/DMMFT960T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeMEDIUM POWERSilicon Gate TMOSTMOS FETSOT223 for Surface Mount300 mA60 VOLTSThis TMOS medium power field effect transistor is designed forRDS(on) = 1.7 OHM MAXhigh speed, low loss power switchi

 0.2. Size:58K  onsemi
 mmft960t1-d.pdf pdf_icon

MMFT960

MMFT960T1Preferred DevicePower MOSFET300 mA, 60 VoltsN-Channel SOT-223This Power MOSFET is designed for high speed, low loss powerhttp://onsemi.comswitching applications such as switching regulators, dc-dc converters,solenoid and relay drivers. The device is housed in the SOT-223300 mA, 60 VOLTSpackage which is designed for medium power surface mountRDS(on) = 1.7 Wapplic

Datasheet: MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , 4N60 , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E .

History: IRFR111

Keywords - MMFT960 MOSFET datasheet

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