MMFT960 MOSFET Datasheet: N-Ch, 60V, 0.3A. Full specification with pinout and replacement list

MMFT960 Specs and Replacement

Type Designator: MMFT960

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 33 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO261AA

MMFT960 substitution

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MMFT960 datasheet

0.1. Size:122K motorola
mmft960t1rev3x.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT960T1/D MMFT960T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode MEDIUM POWER Silicon Gate TMOS TMOS FET SOT 223 for Surface Mount 300 mA 60 VOLTS This TMOS medium power field effect transistor is designed for RDS(on) = 1.7 OHM MAX high speed, low loss power switchi... See More ⇒

0.2. Size:58K onsemi
mmft960t1-d.pdf pdf_icon

MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N-Channel SOT-223 This Power MOSFET is designed for high speed, low loss power http //onsemi.com switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The device is housed in the SOT-223 300 mA, 60 VOLTS package which is designed for medium power surface mount RDS(on) = 1.7 W applic... See More ⇒

Detailed specifications: MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , AO3407 , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E .