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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT960T1/D MMFT960T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode MEDIUM POWER Silicon Gate TMOS TMOS FET SOT 223 for Surface Mount 300 mA 60 VOLTS This TMOS medium power field effect transistor is designed for RDS(on) = 1.7 OHM MAX high speed, low loss power switchi... See More ⇒

MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N-Channel SOT-223 This Power MOSFET is designed for high speed, low loss power http //onsemi.com switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The device is housed in the SOT-223 300 mA, 60 VOLTS package which is designed for medium power surface mount RDS(on) = 1.7 W applic... See More ⇒