All MOSFET. MMFT960 Datasheet


MMFT960 MOSFET. Datasheet pdf. Equivalent

Type Designator: MMFT960

SMD Transistor Code: FT960

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.8 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 0.3 A

Maximum Drain-Source On-State Resistance (Rds): 1.7 Ohm

Package: SOT223

MMFT960 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MMFT960 Datasheet (PDF)

1.1. mmft960t1rev3x.pdf Size:122K _motorola


MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT960T1/D MMFT960T1 Medium Power Field Effect Motorola Preferred Device Transistor N–Channel Enhancement–Mode MEDIUM POWER Silicon Gate TMOS TMOS FET SOT–223 for Surface Mount 300 mA 60 VOLTS This TMOS medium power field effect transistor is designed for RDS(on) = 1.7 OHM MAX high speed, low loss power switching applic

1.2. mmft960t1-d.pdf Size:58K _onsemi


MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N-Channel SOT-223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The device is housed in the SOT-223 300 mA, 60 VOLTS package which is designed for medium power surface mount RDS(on) = 1.7 W applicati


Datasheet: MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , IRFP260N , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E .

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