All MOSFET. MTB2P50E Datasheet

 

MTB2P50E MOSFET. Datasheet pdf. Equivalent

Type Designator: MTB2P50E

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm

Package: D2PAK

MTB2P50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB2P50E Datasheet (PDF)

1.1. mtb2p50e.pdf Size:273K _motorola

MTB2P50E
MTB2P50E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2P50E/D Designer's? Data Sheet MTB2P50E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P–Channel Enhancement–Mode Silicon Gate 2.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 6.0 OHM than any existing surface mount package

1.2. mtb2p50e-d.pdf Size:85K _onsemi

MTB2P50E
MTB2P50E

MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P-Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http://onsemi.com performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 2 AMPERES, 500 VOLTS The energy efficien

 

Datasheet: MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , BUZ10 , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E .

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