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MTB2P50E Spec and Replacement


   Type Designator: MTB2P50E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: D2PAK

 MTB2P50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB2P50E Specs

 ..1. Size:273K  motorola
 mtb2p50e.pdf pdf_icon

MTB2P50E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2P50E/D Designer's Data Sheet MTB2P50E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 2.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 6.0 OHM than any existing surface mou... See More ⇒

 0.1. Size:85K  onsemi
 mtb2p50e-d mtb2p50et4g.pdf pdf_icon

MTB2P50E

MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P-Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http //onsemi.com performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 2 AMPERES, 500 VOLTS The energy effic... See More ⇒

Detailed specifications: MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , IRF520 , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E .

History: MTD5P06V | MTD6N20E | MPF4393 | MMFT960

Keywords - MTB2P50E MOSFET specs

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