MTB2P50E Datasheet. Specs and Replacement

Type Designator: MTB2P50E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: D2PAK

  📄📄 Copy 

MTB2P50E substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB2P50E datasheet

 ..1. Size:273K  motorola
 mtb2p50e.pdf pdf_icon

MTB2P50E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2P50E/D Designer's Data Sheet MTB2P50E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 2.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 6.0 OHM than any existing surface mou... See More ⇒

 0.1. Size:85K  onsemi
 mtb2p50e-d mtb2p50et4g.pdf pdf_icon

MTB2P50E

MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P-Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http //onsemi.com performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 2 AMPERES, 500 VOLTS The energy effic... See More ⇒

Detailed specifications: MMBFJ177L, MMBFJ309L, MMBFJ310L, MMBFU310L, MMDF1N05E, MMFT960, MMSF3P02HD, MPF4393, K3569, MTB50P03HDL, MTD5P06V, MTD6N15, MTD6N20E, MTP20N15E, MTP2P50E, MTP50P03HDL, MTW32N20E

Keywords - MTB2P50E MOSFET specs

 MTB2P50E cross reference

 MTB2P50E equivalent finder

 MTB2P50E pdf lookup

 MTB2P50E substitution

 MTB2P50E replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility