MTB2P50E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB2P50E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 2 A
Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm
Package: D2PAK
MTB2P50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB2P50E Datasheet (PDF)
1.1. mtb2p50et4g.pdf 
Size:85K _upd-mosfet
MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P-Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http://onsemi.com performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 2 AMPERES, 500 VOLTS The energy effic
1.2. mtb2p50e.pdf Size:273K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2P50E/D Designer's? Data Sheet MTB2P50E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P–Channel Enhancement–Mode Silicon Gate 2.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 6.0 OHM than any existing surface mount package
1.3. mtb2p50e-d.pdf Size:85K _onsemi
MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P-Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http://onsemi.com performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 2 AMPERES, 500 VOLTS The energy efficien
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