MTB2P50E Datasheet and Replacement
Type Designator: MTB2P50E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: D2PAK
MTB2P50E substitution
MTB2P50E Datasheet (PDF)
mtb2p50e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB2P50E/DDesigner's Data SheetMTB2P50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 2.0 AMPERES500 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 6.0 OHMthan any existing surface mou
mtb2p50e-d mtb2p50et4g.pdf

MTB2P50EPreferred DevicePower MOSFET2 Amps, 500 VoltsP-Channel D2PAKThis high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradinghttp://onsemi.comperformance over time. In addition, this Power MOSFET is designedto withstand high energy in the avalanche and commutation modes.2 AMPERES, 500 VOLTSThe energy effic
Datasheet: MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , CS150N03A8 , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E .
History: APT40M35JVR | 2N5484
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History: APT40M35JVR | 2N5484



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