NDD02N60Z Datasheet. Specs and Replacement

Type Designator: NDD02N60Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: DPAK IPAK

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NDD02N60Z datasheet

 ..1. Size:143K  onsemi
 ndf02n60z ndp02n60z ndd02n60z.pdf pdf_icon

NDD02N60Z

NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features http //onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested 600 V 4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) D (2... See More ⇒

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 ndd02n40 ndt02n40.pdf pdf_icon

NDD02N60Z

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 400 V 5.5 W @ 10 V Parameter Symbol NDD NDT Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 400 V D (2) Gate-to-S... See More ⇒

Detailed specifications: NCV8401, NCV8402, NCV8402D, NCV8403, NCV8405, NCV8406, NCV8440, NCV8450, 8N60, NDD03N50Z, NDD03N60Z, NDD04N50Z, NDD04N60Z, FDME910PZT, NDD05N50Z, NDF02N60Z, NDF03N60Z

Keywords - NDD02N60Z MOSFET specs

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