NDD02N60Z MOSFET. Datasheet pdf. Equivalent
Type Designator: NDD02N60Z
Marking Code: 2N60ZG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.1 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: DPAK IPAK
NDD02N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDD02N60Z Datasheet (PDF)
ndf02n60z ndp02n60z ndd02n60z.pdf
NDF02N60Z, NDP02N60Z,NDD02N60ZN-Channel Power MOSFET600 V, 4.8 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested600 V4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2
ndd02n40 ndt02n40.pdf
NDD02N40, NDT02N40N-Channel Power MOSFET400 V, 5.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)400 V 5.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 400 VD (2)Gate-to-S
Datasheet: NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , HY1707I , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z .
