All MOSFET. NDD02N60Z Datasheet

 

NDD02N60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: NDD02N60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 57 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: DPAK, IPAK

NDD02N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDD02N60Z Datasheet (PDF)

0.1. ndf02n60z ndp02n60z ndd02n60z.pdf Size:143K _onsemi

NDD02N60Z
NDD02N60Z

NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features http://onsemi.com • Low ON Resistance • Low Gate Charge • ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 1 A • 100% Avalanche Tested 600 V 4.8 W • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) D (2

8.1. ndd02n40 ndt02n40.pdf Size:98K _onsemi

NDD02N60Z
NDD02N60Z

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 400 V 5.5 W @ 10 V Parameter Symbol NDD NDT Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 400 V D (2) Gate-to-S

 

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