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NDD05N50Z Spec and Replacement


   Type Designator: NDD05N50Z
   Marking Code: 5N50ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.5 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK IPAK

 NDD05N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDD05N50Z Specs

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NDD05N50Z

NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant 500 V 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source... See More ⇒

Detailed specifications: NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT , MMIS60R580P , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z , FDMC8327L .

Keywords - NDD05N50Z MOSFET specs

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