All MOSFET. NDF02N60Z Datasheet

 

NDF02N60Z Datasheet and Replacement


   Type Designator: NDF02N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO220FP
 

 NDF02N60Z substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDF02N60Z Datasheet (PDF)

 ..1. Size:143K  onsemi
 ndf02n60z ndp02n60z ndd02n60z.pdf pdf_icon

NDF02N60Z

NDF02N60Z, NDP02N60Z,NDD02N60ZN-Channel Power MOSFET600 V, 4.8 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested600 V4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2

 0.1. Size:786K  cn vbsemi
 ndf02n60zg.pdf pdf_icon

NDF02N60Z

NDF02N60ZGwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 5RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5.2 Compliant to RoHS

Datasheet: NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , HY1906P , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z , FDMC8327L , NDF06N62Z .

History: GFP50N03 | SIHB22N60E | 7N60TF | IRF120 | MPVU4N65F | BL13N25L-P | NDD04N60Z

Keywords - NDF02N60Z MOSFET datasheet

 NDF02N60Z cross reference
 NDF02N60Z equivalent finder
 NDF02N60Z lookup
 NDF02N60Z substitution
 NDF02N60Z replacement

 

 
Back to Top

 


 
.