All MOSFET. NDF02N60Z Datasheet


NDF02N60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: NDF02N60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 24 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 2.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10.1 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 34 pF

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO220FP

NDF02N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search


NDF02N60Z Datasheet (PDF)

0.1. ndf02n60z ndp02n60z ndd02n60z.pdf Size:143K _onsemi


NDF02N60Z, NDP02N60Z,NDD02N60ZN-Channel Power MOSFET600 V, 4.8 WFeatures Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested600 V4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2

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