All MOSFET. NDF03N60Z Datasheet

 

NDF03N60Z Datasheet and Replacement


   Type Designator: NDF03N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: TO220FP
 

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NDF03N60Z Datasheet (PDF)

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NDF03N60Z

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source V

Datasheet: NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , BS170 , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z , FDMC8327L , NDF06N62Z , NDF08N50Z .

History: CHM4301JGP | ELM5K8473A | CEZ3R04 | IRF624S | 2SK1636L | HFP13N50 | NCEP85T35T

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